View PHN210T_4998385.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description dual intermediate level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum er and industrial applications only. 1.2 features and benefits ? suitable for high frequency applications due to fast switching characteristics ? suitable for logic level gate drive sources ? suitable for low gate drive sources 1.3 applications ? dc-to-dc converters ? logic level translators ? motor and relay drivers 1.4 quick reference data [1] surface mounted on fr4 board, t 10 sec. [2] surface mounted on fr4, t 10 sec. PHN210T dual n-channel trenchmos intermediate level fet rev. 02 ? 15 december 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 150 c; repetitive peak drain-source voltage --30v i d drain current t sp = 25 c; single device [1] --3.4a p tot total power dissipation t sp =25c [2] --2w static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =1a; t j =25c -120200m ? v gs =10v; i d =2.2a; t j =25c -80100m ? dynamic characteristics q gd gate-drain charge v gs =10v; i d =2.3a; v ds =15v; t j =25c -0.7-nc
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 2 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet 2. pinning information 3. ordering information table 2. pinning information pin symbol description simplified outline graphic symbol 1s1source1 sot96-1 (so8) 2 g1 gate1 3s2source2 4 g2 gate2 5 d drain2 6 d drain2 7 d drain1 8 d drain1 4 5 1 8 d1 mbk725 g1s1 d1 d2 g2s2 d2 table 3. ordering information type number package name description version PHN210T so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 3 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet 4. limiting values [1] surface mounted on fr4 board, t 10 sec. [2] surface mounted on fr4, t 10 sec. table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage continuous - 30 v t j 25 c; t j 150 c; repetitive peak drain-source voltage -30v v dgr drain-gate voltage r gs =20k ? -30v v gs gate-source voltage -20 20 v i d drain current t sp = 70 c; dual device [1] -1.9a t sp = 70 c; single device [1] -2.8a t sp = 25 c; dual device [1] -2.4a t sp = 25 c; single device [1] -3.4a i dm peak drain current t sp = 25 c; pulsed - 14 a p tot total power dissipation t sp =25c [2] -2w t stg storage temperature -65 150 c t j junction temperature -65 150 c source-drain diode i s source current t sp =25c - 2.2 a i sm peak source current t sp = 25 c; pulsed - 14 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =3.4a; v dd 15 v; unclamped; r gs =50 ? ; t p =0.2ms -13mj i as non-repetitive avalanche current v sup 15 v; v gs =10v; t j(init) =25c; r gs =50 ? ; unclamped -3.4a
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 4 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet fig 1. normalized total power dissipation as a function of ambient temperature fig 2. normalized continuous drain current as a function of ambi ent temperature t a = 25 c; i dm is single pulse unclamped inductive load fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage fig 4. single-shot avalanche rating; avalanche current as a function of avalanche period 40 80 120 p der (%) 0 t amb (c) 0 160 120 40 80 003aaf065 40 80 120 l d (%) 0 t amb (c) 0 160 120 40 80 003aaf066 003aaf067 v ds (v) 10 ?1 10 2 10 1 10 ?1 1 10 10 2 i dm (a) 10 ?2 r ds(on) = v ds / i d 100 ms 10 s 10 ms 1 ms 100 s tp = 10 s 003aaf080 t p (s) 10 ?6 10 ?2 10 ?3 10 ?5 10 ?4 1 10 i as (a) 10 ?1 t j prior to avalanche = 125 c 25 c id vds t p
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 5 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient surface mounted; fr4 board - 150 - k/w surface mounted; fr4 board; t 10 sec - - 62.5 k/w fig 5. transient thermal impedance from junction to ambient as a function of pulse duration 003aaf068 10 ? 1 1 10 10 2 z th(j-a) (k/w) 10 ? 2 t p (s) 10 ? 6 10 ? 1 110 10 ? 2 10 ? 5 10 ? 3 10 ? 4 t p t p t p t t = single pulse 0.02 0.05 0.1 0.2 = 0.5
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 6 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =10a; v gs =0v; t j =25c 30--v i d =10a; v gs =0v; t j = -55 c 27 - - v v gs(th) gate-source threshold voltage i d =1ma; v ds =v gs ; t j =-55c --3.2v i d =1ma; v ds =v gs ; t j = 150 c 0.4 - - v i d =1ma; v ds =v gs ; t j =25c 122.8v i dss drain leakage current v ds =24v; v gs =0v; t j = 25 c - 10 100 na v ds =24v; v gs =0v; t j = 150 c - 0.6 10 a i gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - 10 100 na v gs =-20v; v ds =0v; t j = 25 c - 10 100 na r dson drain-source on-state resistance v gs =4.5v; i d =1a; t j = 25 c - 120 200 m ? v gs =10v; i d =2.2a; t j = 150 c - - 170 m ? v gs =10v; i d =2.2a; t j = 25 c - 80 100 m ? i dson on-state drain current v ds =1v; v gs =10v 3.5--a v ds =5v; v gs =4.5v 2--a dynamic characteristics q g(tot) total gate charge i d =2.3a; v ds =15v; v gs =10v; t j =25c -6-nc q gs gate-source charge - 0.7 - nc q gd gate-drain charge - 0.7 - nc c iss input capacitance v ds =20v; v gs = 0 v; f = 1 mhz; t j =25c - 250 - pf c oss output capacitance - 88 - pf c rss reverse transfer capacitance -54-pf t d(on) turn-on delay time v ds =20v; r l =18 ? ; v gs =10v; r g(ext) =6 ? ; t j =25c -6-ns t r rise time - 8 - ns t d(off) turn-off delay time - 21 - ns t f fall time - 15 - ns g fs transfer conductance v ds =20v; i d = 2.2 a; t j =25c 2 4.5 - s l d internal drain inductance measured from drain lead to centre of die; t j =25c -2.5-nh l s internal source inductance measured from source lead to source bond pad; t j =25c -5-nh source-drain diode v sd source-drain voltage i s = 1.25 a; v gs =0v; t j = 25 c - 0.82 1.2 v t rr reverse recovery time i s = 1.25 a; di s /dt = -100 a/s; v gs =0v; v ds =25v; t j =25c -69-ns q r recovered charge - 55 - nc
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 7 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet t j = 25 c t j = 25 c fig 6. output characteristics: drain current as a function of drain-source voltage; typical values fig 7. drain-source on-state resistance as a function of drain current; typical values v ds > i d x r dson v ds > i d x r dson fig 8. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 9. forward transconductance as a function of drain current; typical values i d = 1 ma; v ds = v gs fig 10. normalized drain-source on-state resistance factor as a function of junction temperature fig 11. gate-source threshold voltage as a function of junction temperature 4 6 2 8 10 l d (a) 0 v ds (v) 02 1.6 0.8 1.2 0.4 003aaf069 v gs (v) = 20 10 4.2 4 3.8 3.6 3.4 3.2 5 0.2 0.3 0.1 0.4 0.5 r ds(on) () 0 i d (a) 010 8 46 2 003aaf070 20 4.2 4 3.8 3.6 3.4 3.2 v gs (v) = 5 10 4 6 2 8 10 i d (a) 0 003aaf071 v gs (v) 06 4 2 t j = 25 c t j = 150 c 2 4 6 g fs (s) 0 l d (a) 010 8 46 2 003aaf073 t j = 25 c t j = 150 c 0 1.5 1 0.5 2 a t j (c) ?50 150 100 050 003aaf074 0 3 2 1 4 v gs(th) (v) 003aaf075 t j (c) ?70 170 90 10 maximum minimum typical
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 8 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet t j = 25 c; v ds = v gs v gs = 0 v; f = 1 mhz fig 12. sub-threshold drain current as a function of gate-source voltage fig 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values i d = 2.3 a; t j = 25 c; v dd = 15 v v gs = 0 v fig 14. gate-source voltage as a function of gate charge; typical values fig 15. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aaf076 v gs (v) 05 3 12 10 ?4 10 ?5 10 ?2 10 ?3 1 i d (a) 10 ?6 maximum minimum typical 003aaf077 v ds (v) 10 ?1 10 2 10 1 10 2 10 3 10 c (pf) c iss c oss c rss 0 12 8 4 16 v gs (v) q g (nc) 010 8 46 2 003aaf078 4 6 2 8 10 l f (a) 0 v sds (v) 0 1.6 1.2 0.4 0.8 003aaf079 t j = 150 c t j = 25 c
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 9 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet 7. package outline fig 16. package outline sot96-1 (so8) unit a max. a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz ywv references outline version european projection issue date iec jedec jeita mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. 1.0 0.4 sot96-1 x w m so8: plastic small outline package; 8 leads; body width 3.9 mm sot96-1 99-12-27 03-02-18
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 10 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes PHN210T v.2 20101215 product data sheet - PHN210T v.1 modifications: ? the format of this data sheet has been redesigne d to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. PHN210T v.1 19990301 product specification - -
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 11 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualific ation this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the product specification.
PHN210T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 15 december 2010 12 of 13 nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PHN210T dual n-channel trenchmos intermediate level fet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 15 december 2010 document identifier: PHN210T please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 contact information. . . . . . . . . . . . . . . . . . . . . .12

▲Up To Search▲

Price & Availability of PHN210T

	To Download PHN210T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .